Structure of the Al0.27Ga0.73N/GaN diode under study. | Download Scientific Diagram
A High Current Operation in a 1.6 kV GaN-based Trenched Junction Barrier Schottky (JBS) Diode | Semantic Scholar
Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction | Nanoscale Research Letters | Full Text
Review of Recent Progress on Vertical GaN-Based PN Diodes | Nanoscale Research Letters | Full Text
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes
Cutting leakage in gallium nitride vertical diodes on silicon
Gallium nitride vertical junction barrier Schottky diodes
New GaN diodes can serve as building blocks for future GaN power switches - Green Car Congress
Electrical characterization of the Mg implanted GaN p-i-n diode. (a)... | Download Scientific Diagram
GaN-Based Schottky Diode | IntechOpen
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors | Scientific Reports
Breakdown-induced conductive channel for III-nitride light-emitting devices | Scientific Reports
a) Forward I-V characteristics and (b) ideality factors of GaN p-n... | Download Scientific Diagram
Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs) | HTML
Chinese team develops Kilovolt GaN diode - News
Graphene-GaN Schottky diodes | SpringerLink
Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications - ScienceDirect
Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth | Scientific Reports
GaN nanoscale vacuum electron diode (NVED). (a) Device geometry for GaN... | Download Scientific Diagram
Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 - Advances in Engineering
Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications: Journal of Vacuum Science & Technology B: Vol 34, No 2
Fully vertical gallium nitride p-i-n diode grown on silicon substrate
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode
