Review of Recent Progress on Vertical GaN-Based PN Diodes | SpringerLink
Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure | ACS Nano
Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
Study of a GaN Schottky diode based hydrogen sensor with a hydrogen peroxide oxidation approach and platinum catalytic metal - ScienceDirect
PTC Website
Electrical characterization of the Mg implanted GaN p-i-n diode. (a)... | Download Scientific Diagram
Rounding Up Schottky Barrier Diode's Exploits With Wide Bandgap Materials - News
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment - ScienceDirect
Embedding diodes in normally-off GaN transistors
Crystals | Free Full-Text | The Study of High Breakdown Voltage Vertical GaN -on-GaN p-i-n Diode with Modified Mesa Structure
PTC Website
Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties | Scientific Reports
High performance vertical GaN-on-GaN p-n power diodes with hydrogen-plasma based edge termination
Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)
Review of Recent Progress on Vertical GaN-Based PN Diodes | SpringerLink
Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)
Review of Recent Progress on Vertical GaN-Based PN Diodes | SpringerLink
GaN-Based Schottky Diode | IntechOpen
Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range - ScienceDirect
Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)
PL Intensity and Life-Time Enhancements of the n-GaN Light-Emitting Diode During the Device Fabrication ~ Fulltext
Graphene-GaN Schottky diodes | SpringerLink
Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier: Applied Physics Letters: Vol 108, No 11
Figure 2 from 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy | Semantic Scholar
